Thursday, September 20, 2012

Enhanced Lithiation of Doped 6H Silicon Carbide (0001) via High Temperature Vacuum Growth of Epitaxial Graphene

Albert L. Lipson, Sudeshna Chattopadhyay, Hunter J. Karmel, Timothy T. Fister, Jonathan D. Emery, Vinayak P. Dravid, Michael M. Thackeray, Paul A. Fenter, Michael J. Bedzyk and Mark C. Hersam



TOC Graphic


The Journal of Physical Chemistry C

DOI: 10.1021/jp307220y






Link to full article

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