Wednesday, October 17, 2012

Mechanism for radiative recombination and defect properties of GaP/GaNP core/shell nanowires

(author unknown)



A. Dobrovolsky, J. E. Stehr, and S. L. Chen et al.

Recombination processes in GaP/GaNP core/shell nanowires (NWs) grown on a Si substrate by molecular beam epitaxy are examined using a variety of optical characterization techniques, including cw- and time-resolved photoluminescence and optically detected magnetic resonance (ODMR). Superior optical ... [Appl. Phys. Lett. 101, 163106 (2012)] published Wed Oct 17, 2012.



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