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S. T. Bartsch, A. Rusu, and A. M. Ionescu
We demonstrate the room-temperature operation of a silicon nanoelectromechanical resonant-body field effect transistor (RB-FET) embedded into phase-locked loop (PLL). The very-high frequency resonator uses on-chip electrostatic actuation and transistor-based displacement detection. The heterodyne ... [Appl. Phys. Lett. 101, 153116 (2012)] published Thu Oct 11, 2012.
Link to full article
S. T. Bartsch, A. Rusu, and A. M. Ionescu
We demonstrate the room-temperature operation of a silicon nanoelectromechanical resonant-body field effect transistor (RB-FET) embedded into phase-locked loop (PLL). The very-high frequency resonator uses on-chip electrostatic actuation and transistor-based displacement detection. The heterodyne ... [Appl. Phys. Lett. 101, 153116 (2012)] published Thu Oct 11, 2012.
Link to full article
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