Nanochemistry
Where size matters
Pages
Home
Donations
Contact Me
Tuesday, February 19, 2013
HfOx-Based Vertical Resistive Switching Random Access Memory Suitable for Bit-Cost-Effective Three-Dimensional Cross-Point Architecture
Shimeng Yu, Hong-Yu Chen, Bin Gao, Jinfeng Kang and H.-S. Philip Wong
ACS Nano
DOI: 10.1021/nn305510u
Link to full article
No comments:
Post a Comment
Newer Post
Older Post
Home
Subscribe to:
Post Comments (Atom)
No comments:
Post a Comment