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A. Urbańczyk, J. G. Keizer, and P. M. Koenraad et al.
We demonstrate that molecular beam epitaxy-grown InAs quantum dots (QDs) on (100) GaAs obtained by conversion of In nanocrystals enable long wavelength emission in the InAs/GaAs material system. At room temperature they exhibit a broad photoluminescence band that extends well beyond 1.55 μm. We co ... [Appl. Phys. Lett. 102, 073103 (2013)] published Tue Feb 19, 2013.
Link to full article
A. Urbańczyk, J. G. Keizer, and P. M. Koenraad et al.
We demonstrate that molecular beam epitaxy-grown InAs quantum dots (QDs) on (100) GaAs obtained by conversion of In nanocrystals enable long wavelength emission in the InAs/GaAs material system. At room temperature they exhibit a broad photoluminescence band that extends well beyond 1.55 μm. We co ... [Appl. Phys. Lett. 102, 073103 (2013)] published Tue Feb 19, 2013.
Link to full article
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