Monday, August 18, 2014

Bias induced transition from an ohmic to a non-ohmic interface in supramolecular tunneling junctions with Ga2O3/EGaIn top electrodes




Nanoscale , 2014, Advance Article

DOI: 10.1039/C4NR02933J, Paper

Kim S. Wimbush, Raluca M. Fratila, Dandan Wang, Dongchen Qi, Cao Liang, Li Yuan, Nikolai Yakovlev, Kian Ping Loh, David N. Reinhoudt, Aldrik H. Velders, Christian A. Nijhuis

Electrochemical side reactions are not important in EGaIn junctions with monolayers that contain water and mobile ions in the bias window of +/-1.0 V.

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