Bias voltage induced resistance switching effect in single-molecule magnets’ tunneling junction

An electric-pulse-induced reversible resistance change effect in a molecular magnetic tunneling junction, consisting of a single-molecule magnet (SMM) sandwiched in one nonmagnetic and one ferromagnetic electrode, is theoretically investigated. By applying a time-varying bias voltage, the SMMʼs spin orientation can be manipulated with large bias voltage pulses. Moreover, the different magnetic configuration at high-resistance/low-resistance states can be ‘read out’ by utilizing relative low bias voltage. This device scheme can be implemented with current technologies (Khajetoorians et al 2013 Science 339 [http://ift.tt/1sY08Nx] 55 ) and has potential application in molecular spintronics and high-density nonvolatile memory devices.

Zhengzhong Zhang and Liang Jiang

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