Thursday, August 07, 2014

Magnetoelectric Assisted 180° Magnetization Switching for Electric Field Addressable Writing in Magnetoresistive Random-Access Memory

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ACS Nano

DOI: 10.1021/nn503369y




Zhiguang Wang, Yue Zhang, Yaojin Wang, Yanxi Li, Haosu Luo, Jiefang Li and Dwight Viehland

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