Friday, September 19, 2014

300 mm Wafer-level, ultra-dense arrays of Au-capped nanopillars with sub-10 nm gaps as reliable SERS substrates




Nanoscale , 2014, Advance Article

DOI: 10.1039/C4NR04315D, Communication

Jiaqi Li, Chang Chen, Hilde Jans, Xiumei Xu, Niels Verellen, Ingrid Vos, Yasuaki Okumura, Victor V. Moshchalkov, Liesbet Lagae, Pol Van Dorpe

The 193 nm deep UV immersion lithography is leveraged to fabricate highly dense and uniform arrays of Au-capped Si nanopillars on a 300 mm wafer level for reliable surface enhanced Raman spectroscopy applications.

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