Nanoscale , 2014, Advance Article
DOI: 10.1039/C4NR02816C, Paper
DOI: 10.1039/C4NR02816C, Paper
Lin Wang, Xiaoshuang Chen, Yibin Hu, Anqi Yu, Wei Lu
Observations of the negative differential conductance (NDC) phenomenon in graphene field-effect transistors (FET) open up new opportunities for their application in graphene-based fast switches, frequency multipliers and, most importantly, in high frequency oscillators up to the terahertz regime.
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Observations of the negative differential conductance (NDC) phenomenon in graphene field-effect transistors (FET) open up new opportunities for their application in graphene-based fast switches, frequency multipliers and, most importantly, in high frequency oscillators up to the terahertz regime.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry
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