Thursday, October 09, 2014

Confinement-modulated junctionless nanowire transistors for logic circuits




Nanoscale , 2014, Advance Article

DOI: 10.1039/C4NR04047C, Communication

Francois Vaurette, Renaud Leturcq, Sylvie Lepilliet, Bruno Grandidier, Didier Stievenard

We report the controlled formation of nanoscale constrictions in junctionless nanowire field-effect transistors, acting as potential barriers. The height of the barriers can be selectively tuned by gates, making the device concept compatible with the crossbar geometry in order to create logic circuits.

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