We investigate the structural and optical properties of spontaneously formed GaN nanowires with different degrees of coalescence. This quantity is determined by an analysis of the cross-sectional area and perimeter of the nanowires obtained by plan-view scanning electron microscopy. X-ray diffraction experiments are used to measure the inhomogeneous strain in the nanowire ensembles as well as the orientational distribution of the nanowires. The comparison of the results obtained for GaN nanowire ensembles prepared on bare Si ##IMG## [http://ift.tt/1vBhWRS] {$(111)$} and AlN buffered 6H-SiC ##IMG## [http://ift.tt/1wZIvhN] {$(000\bar{1})$} reveals that the main source of the inhomogeneous strain is the random distortions caused by the coalescence of adjacent nanowires. The magnitude of the strain inhomogeneity induced by nanowire coalescence is found...
S Fernández-Garrido, V M Kaganer, C Hauswald, B Jenichen, M Ramsteiner, V Consonni, L Geelhaar and O Brandt
Click for full article
S Fernández-Garrido, V M Kaganer, C Hauswald, B Jenichen, M Ramsteiner, V Consonni, L Geelhaar and O Brandt
Click for full article
No comments:
Post a Comment