Friday, October 17, 2014

Photoexcited-induced sensitivity of InGaAs surface QDs to environment

A detailed analysis of the impact of illumination on the electrical response of In 0.5 Ga 0.5 As surface nanostructures is carried out as a function of different relative humidity conditions. The importance of the surface-to-volume ratio for sensing applications is once more highlighted. From dark-to-photo conditions, the sheet resistance (SR) of a three-dimensional In 0.5 Ga 0.5 As nanostructure decays two orders of magnitude compared with that of a two-dimensional nanostructure. The electrical response is found to be vulnerable to the energy of the incident light and the external conditions. Illuminating with high energy light translates into an SR reduction of one order of magnitude under humid atmospheres, whereas it remains nearly unchanged under dry environments. Conversely, lighting with energy below the bulk energy bandgap, shows a negligible effect on the electrical properties regardless the local moisture. Both illumination and humidi...

M J Milla, J M Ulloa and A Guzmán

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