Friday, October 31, 2014

Raman scattering study of InAs nanowires under high pressure

The pressure-dependent phonon modes of InAs nanowires have been investigated by Raman spectroscopy under high pressure up to ∼58 GPa. X-ray diffraction measurements show that InAs nanowires at 21 GPa exhibit a phase transition from a wurtzite to an orthorhombic crystal structure, with a corresponding drastic change in the first-order Raman spectra. In the low-pressure regime, a linear increase in phonon frequencies is observed, whereas splitting between longitudinal and transversal optical phonon modes decreases as a function of applied pressure. The calculated mode Grüneisen parameters and Born’s transverse effective charge indicate that the wurtzite InAs nanowires exhibit a more covalent nature under compression.

Dipanwita Majumdar, Abhisek Basu, Goutam Dev Mukherjee, Daniele Ercolani, Lucia Sorba and Achintya Singha

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