Monday, November 17, 2014

Deep-Ultraviolet-Light-Driven Reversible Doping of WS2 Field-Effect Transistor

Nanoscale , 2014, Accepted Manuscript

DOI: 10.1039/C4NR05129G, Paper

Muhammad Waqas Iqbal, M. Z. Iqbal, Muhammad Farooq Khan, M Arslan Shehzad, Yongho Seo, Jonghwa Eom

Improvement of the electrical and photoelectric characteristics is essential to get advanced performance of field effect transistors and optoelectronic devices. Here we have developed a doping technique to drastically improve...

The content of this RSS Feed (c) The Royal Society of Chemistry





Click for full article

No comments:

Post a Comment