Nanoscale , 2015, Advance Article
DOI: 10.1039/C4NR06057A, Communication
DOI: 10.1039/C4NR06057A, Communication
Shisheng Li, Shunsuke Sakurai, Don N. Futaba, Kenji Hata
An NiO nanoparticle point etching method has been utilised to etch metallic SWCNT pathways selectively and highly locally, achieving a huge increase in the on/off ratios of FET devices while minimizing the unavoidable drop in on-state current.
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An NiO nanoparticle point etching method has been utilised to etch metallic SWCNT pathways selectively and highly locally, achieving a huge increase in the on/off ratios of FET devices while minimizing the unavoidable drop in on-state current.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry
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