Nanoscale , 2015, Advance Article
DOI: 10.1039/C4NR05077K, Paper
DOI: 10.1039/C4NR05077K, Paper
Writam Banerjee, Nianduan Lu, Ling Li, Pengxiao Sun, Qi Liu, Hangbing Lv, Shibing Long, Ming Liu
High uniformity, reliability, nonvolatility and nonlinearity is achieved in IrOx metal nanocrystal based selector-less crossbar resistive random access memory devices.
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High uniformity, reliability, nonvolatility and nonlinearity is achieved in IrOx metal nanocrystal based selector-less crossbar resistive random access memory devices.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry
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