Monday, January 19, 2015

Polarized single photon emission and photon bunching from an InGaN quantum dot on a GaN micropyramid

We report on excitonic single photon emission and biexcitonic photon bunching from an InGaN quantum dot formed on the apex of a hexagonal GaN micropyramid. An approach to suppress uncorrelated emission from the pyramid base is proposed, a metal film is demonstrated to effectively screen background emission and thereby significantly enhance the signal-to-background ratio of the quantum dot emission. As a result, the second order coherence function at zero time delay ##IMG## [http://ift.tt/1EgK8fl] {${{g}^{(2)}}(0)$} is significantly reduced (to ##IMG## [http://ift.tt/1sUG3ME] {${{g}^{(2)}}(0)$} = 0.24, raw value) for the excitonic autocorrelation at a temperature of 12 K under continuous wave excitation, and a dominating single photon emission is demonstrated to survive up to 50 K. The deterioration of the ##IMG## {${{g}^{(2)}}(0)$}



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