Nanoscale , 2015, Advance Article
DOI: 10.1039/C4NR06677D, Paper
DOI: 10.1039/C4NR06677D, Paper
Xuegong Yu, Lifei Yang, Qingmin Lv, Mingsheng Xu, Hongzheng Chen, Deren Yang
The efficiency of graphene-silicon (Gr-Si) Schottky junction solar cells can be effectively improved by electric field doping based on the employment of a top-gate to the cell or polarization of a ferroelectric polymer layer integrated in the cell.
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The efficiency of graphene-silicon (Gr-Si) Schottky junction solar cells can be effectively improved by electric field doping based on the employment of a top-gate to the cell or polarization of a ferroelectric polymer layer integrated in the cell.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry
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