Thursday, February 12, 2015

A facile process to achieve hysteresis-free and fully stabilized graphene field-effect transistors




Nanoscale , 2015, Advance Article

DOI: 10.1039/C4NR06397J, Paper

Yun Ji Kim, Young Gon Lee, Ukjin Jung, Sangchul Lee, Sang Kyung Lee, Byoung Hun Lee

We report on a facile process sequence that can improve the time-dependent stability of graphene field-effect transistors (GFETs). By properly combining some simple additional processes, high performance CVD GFETs with symmetrical I-V characteristics can be obtained. The stable operation of these GFETs over two weeks has been confirmed in open air.

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