Nanoscale , 2015, 7,4013-4019
DOI: 10.1039/C4NR06397J, Paper
DOI: 10.1039/C4NR06397J, Paper
Yun Ji Kim, Young Gon Lee, Ukjin Jung, Sangchul Lee, Sang Kyung Lee, Byoung Hun Lee
We report on a facile process sequence that can improve the time-dependent stability of graphene field-effect transistors (GFETs). By properly combining some simple additional processes, high performance CVD GFETs with symmetrical I-V characteristics can be obtained. The stable operation of these GFETs over two weeks has been confirmed in open air.
The content of this RSS Feed (c) The Royal Society of Chemistry
We report on a facile process sequence that can improve the time-dependent stability of graphene field-effect transistors (GFETs). By properly combining some simple additional processes, high performance CVD GFETs with symmetrical I-V characteristics can be obtained. The stable operation of these GFETs over two weeks has been confirmed in open air.
The content of this RSS Feed (c) The Royal Society of Chemistry
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