Tuesday, February 10, 2015

Influence of Inhomogeneous Porosity on Silicon Nanowire Raman Enhancement and Leaky Mode Modulated Photoluminescence

Nanoscale , 2015, Accepted Manuscript

DOI: 10.1039/C4NR06329E, Paper

Daniel Ratchford, Junghoon Yeom, James P. Long, Pehr Pehrsson

Metal-assisted chemical etching (MACE) offers an inexpensive, massively parallel fabrication process for producing silicon nanowires (SiNWs). These nanowires can possess a degree of porosity depending on etch conditions. Because the...

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