Wednesday, February 04, 2015

Non-exponential resistive switching in Ag2S memristors: a key to nanometer-scale non-volatile memory devices

Nanoscale , 2015, Accepted Manuscript

DOI: 10.1039/C5NR00399G, Communication

Agnes Gubicza, Miklos Csontos, Andras Halbritter, Gyorgy Mihaly

The dynamics of resistive switchings in nanometer-scale metallic junctions formed between an inert metallic tip and an Ag film covered by a thin Ag2S layer are investigated. Our thorough experimental...

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