Monday, February 16, 2015

Non-exponential resistive switching in Ag2S memristors: a key to nanometer-scale non-volatile memory devices




Nanoscale , 2015, Advance Article

DOI: 10.1039/C5NR00399G, Communication

Agnes Gubicza, Miklos Csontos, Andras Halbritter, Gyorgy Mihaly

The non-exponential dynamics of resistive switchings in Ag2 S memristive nanojunctions provides an ideal basis for non-volatile memory applications.

To cite this article before page numbers are assigned, use the DOI form of citation above.

The content of this RSS Feed (c) The Royal Society of Chemistry





Click for full article

No comments:

Post a Comment