Thursday, March 26, 2015

Bonding and electronic states of boron in silicon nanowires characterized by an infrared synchrotron radiation beam




Nanoscale , 2015, Advance Article

DOI: 10.1039/C5NR00427F, Paper

N. Fukata, W. Jevasuwan, Y. Ikemoto, T. Moriwaki

The first report of B local vibrational peaks and electronic transitions of a bound hole from the ground state of a B acceptor atom to excited states by means of micro-FT-IR measurements using an IR-SR beam.

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