Wednesday, March 04, 2015

Forming-free and self-rectifying resistive switching of the simple Pt/TaOx/n-Si structure for access device-free high-density memory application

Nanoscale , 2015, Accepted Manuscript

DOI: 10.1039/C4NR06406B, Paper

Shuang Gao, Fei Zeng, Fan Li, Minjuan Wang, Haijun Mao, Guangyue Wang, Cheng Song, feng pan

The search for self-rectifying resistive memories has aroused great attention due to their potential high-density memory application without additional access devices. Here we report the forming-free and self-rectifying bipolar resistive...

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