Nanoscale , 2015, Advance Article
DOI: 10.1039/C4NR06406B, Paper
DOI: 10.1039/C4NR06406B, Paper
Shuang Gao, Fei Zeng, Fan Li, Minjuan Wang, Haijun Mao, Guangyue Wang, Cheng Song, Feng Pan
The simple Pt/TaOx /n-Si structure exhibits a forming-free and self-rectifying resistive switching behavior and consequently possesses great potential for access device-free high-density memory applications.
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The simple Pt/TaOx /n-Si structure exhibits a forming-free and self-rectifying resistive switching behavior and consequently possesses great potential for access device-free high-density memory applications.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry
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