Nanoscale , 2015, Advance Article
DOI: 10.1039/C5NR00861A, Communication
DOI: 10.1039/C5NR00861A, Communication
Hong-Sub Lee, Hyung-Ho Park, M. J. Rozenberg
A resistive random access memory (ReRAM) based on the memristive effect allows high-density integration through a cross-point array (CPA) structure.
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A resistive random access memory (ReRAM) based on the memristive effect allows high-density integration through a cross-point array (CPA) structure.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry
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