Trap density probing on top-gate MoS2 nanosheet field-effect transistors by photo-excited charge collection spectroscopy

Nanoscale , 2015, Advance Article

DOI: 10.1039/C4NR06707J, Communication

Kyunghee Choi, Syed Raza Ali Raza, Hee Sung Lee, Pyo Jin Jeon, Atiye Pezeshki, Sung-Wook Min, Jin Sung Kim, Woojin Yoon, Sang-Yong Ju, Kimoon Lee, Seongil Im

Channel and interface traps in top-gate MoS₂ FETs were analyzed by photo-electric probing.

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