Thursday, March 19, 2015

Unique features of laterally aligned GeSi nanowires self-assembled on the vicinal Si (001) surface misoriented toward the [100] direction




Nanoscale , 2015, 7,5835-5842

DOI: 10.1039/C4NR07433E, Paper

Tong Zhou, Guglielmo Vastola, Yong-Wei Zhang, Qijun Ren, Yongliang Fan, Zhenyang Zhong

Naturally aligned in-plane (without post-growth assembly), defect-free (without a metal catalyst) and controllable GeSi nanowires are discovered via self-assembly of Ge on miscut Si (001) substrates by an angle [small theta] ([small theta] < 11[degree]) toward the [100] direction.

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