Nanoscale , 2015, Advance Article
DOI: 10.1039/C4NR06874B, Paper
DOI: 10.1039/C4NR06874B, Paper
E. Xenogiannopoulou, P. Tsipas, K. E. Aretouli, D. Tsoutsou, S. A. Giamini, C. Bazioti, G. P. Dimitrakopulos, Ph. Komninou, S. Brems, C. Huyghebaert, I. P. Radu, A. Dimoulas
Atomically thin MoSe2 films grown epitaxially on AlN by MBE have high crystallinity, smooth surface and interface morphology, and sizable semiconductor band gap for use in nanoelectronics.
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Atomically thin MoSe2 films grown epitaxially on AlN by MBE have high crystallinity, smooth surface and interface morphology, and sizable semiconductor band gap for use in nanoelectronics.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry
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