Thursday, April 09, 2015

High-quality, large-area MoSe2 and MoSe2/Bi2Se3 heterostructures on AlN(0001)/Si(111) substrates by molecular beam epitaxy




Nanoscale , 2015, Advance Article

DOI: 10.1039/C4NR06874B, Paper

E. Xenogiannopoulou, P. Tsipas, K. E. Aretouli, D. Tsoutsou, S. A. Giamini, C. Bazioti, G. P. Dimitrakopulos, Ph. Komninou, S. Brems, C. Huyghebaert, I. P. Radu, A. Dimoulas

Atomically thin MoSe2 films grown epitaxially on AlN by MBE have high crystallinity, smooth surface and interface morphology, and sizable semiconductor band gap for use in nanoelectronics.

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