Negative differential resistance in monolayer WTe 2 tunneling transistors

We report theoretical investigations of quantum transport in monolayer transition metal dichalcogenide (TMDC) tunneling field effect transistors (TFETs). Due to the specific electronic structure of TMDC ##IMG## [http://ift.tt/1Jn7YZk] {${\rm WT}{{{\rm e}}_{2}}$} , a transmission valley is found in the conduction band (CB). For a proper choice of the doping, gate and supply voltages the ##IMG## [http://ift.tt/1GnBakA] {${\rm WT}{{{\rm e}}_{2}}$} TFET can produce a giant negative differential resistance (NDR) with a peak to valley ratio as large as 10 3 . The mechanism of NDR is identified to be due to a transport-mode bottleneck, i.e., the band to band tunneling from the valence band of the source is partially blocked by a transmission valley of the CB of the drain. More generally, our calculations show that electronic structures of at lea...



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