Ultrahigh near infrared photoresponsive organic field-effect transistors with lead phthalocyanine/C 60 heterojunction on poly(vinyl alcohol) gate dielectric

Performances of photoresponsive organic field-effect transistors (photOFETs) operating in the near infrared (NIR) region utilizing SiO 2 as the gate dielectric is generally low due to low carrier mobility of the channel. We report on NIR photOFETs based on lead phthalocyanine (PbPc)/C 60 heterojunction with ultrahigh photoresponsivity by utilizing poly(vinyl alcohol) (PVA) as the gate dielectric. For 808 nm NIR illumination of 1.69 mW cm −2 , an ultrahigh photoresponsivity of 21 A W −1 , and an external quantum efficiency of 3230% were obtained at a gate voltage of 30 V and a drain voltage of 80 V, which are 124 times and 126 times as large as the reference device with SiO 2 as the gate dielectric, respectively. The ultrahigh enhancement of photoresponsivity is resulted from the huge increase of electron mobility of C 60 film grown on PVA dielectric. AFM investigations revealed that the C 60 film grown on PVA is ...

Lei Sun, Jianping Zhang, Feiyu Zhao, Xiao Luo, Wenli Lv, Yao li, Qiang Ren, Zhanwei Wen, Yingquan Peng and Xingyuan Liu

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