Electrically pumped random lasing with an onset voltage of sub-3 V from ZnO-based light-emitting devices featuring nanometer-thick MoO3 interlayers

Nanoscale, 2015, 7,9164-9168
DOI: 10.1039/C5NR01562F, Communication

Can-Xing Wang, Chun-Yan Lv, Chen Zhu, Zhi-Fei Gao, Dong-Sheng Li, Xiang-Yang Ma, De-Ren Yang
We report on electrically pumped random lasing with onset voltage at [similar]2.6 V from ZnO based light-emitting-device with structure of Au/SiO₂/MoO₃/ZnO.
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