Friday, June 19, 2015

Graphene/Pentacene Barristor with Ion-Gel Gate Dielectric: Flexible Ambipolar Transistor with High Mobility and On/Off Ratio

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ACS Nano
DOI: 10.1021/acsnano.5b02616

Gwangtaek Oh, Jin-Soo Kim, Ji Hoon Jeon, EunA Won, Jong Wan Son, Duk Hyun Lee, Cheol Kyeom Kim, Jingon Jang, Takhee Lee and Bae Ho Park
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