Thursday, June 18, 2015

High mobility flexible graphene field-effect transistors and ambipolar radio-frequency circuits

Nanoscale, 2015, 7,10954-10962
DOI: 10.1039/C5NR02292D, Communication
Yiran Liang, Xuelei Liang, Zhiyong Zhang, Wei Li, Xiaoye Huo, Lianmao Peng
Field-effect transistors (GFETs) were fabricated on mechanically flexible substrates using chemical vapor deposition grown graphene.
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