Ultralow-power non-volatile memory cells based on P(VDF-TrFE) ferroelectric-gate CMOS silicon nanowire channel field-effect transistors

Nanoscale, 2015, Advance Article
DOI: 10.1039/C5NR02019K, Paper

Ngoc Huynh Van, Jae-Hyun Lee, Dongmok Whang, Dae Joon Kang
Nanowire-based ferroelectric-complementary metal-oxide-semiconductor (NW FeCMOS) nonvolatile memory devices were successfully fabricated by utilizing single n- and p-type Si nanowire ferroelectric-gate field effect transistors (NW FeFETs) as individual memory cells.
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