Thursday, July 23, 2015

Bilayer insulator tunnel barriers for graphene-based vertical hot-electron transistors

Nanoscale, 2015, 7,13096-13104
DOI: 10.1039/C5NR03002A, Paper
S. Vaziri, M. Belete, E. Dentoni Litta, A. D. Smith, G. Lupina, M. C. Lemme, M. Ostling
Bilayer dielectric tunnel barriers in graphene-based electron injection tunnel diodes show high tunneling current densities due to step tunneling.
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