Conduction Mechanisms in CVD-Grown Monolayer MoS2 Transistors: From Variable-Range Hopping to Velocity Saturation

Nano Letters

DOI: 10.1021/acs.nanolett.5b01159

G. He, K. Ghosh, U. Singisetti, H. Ramamoorthy, R. Somphonsane, G. Bohra, M. Matsunaga, A. Higuchi, N. Aoki, S. Najmaei, Y. Gong, X. Zhang, R. Vajtai, P. M. Ajayan and J. P. Bird
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