Monday, July 20, 2015

Electrical-field-driven metal-insulator transition tuned with self-aligned atomic defects

Nanoscale, 2015, Accepted Manuscript
DOI: 10.1039/C5NR03251B, Paper
Askar Syrlybekov, Han-Chun Wu, Ozhet Mauit, Ye-Cun Wu, Pierce Maguire, Abbas Khlaid, Cormac O Coileain, Leo Farrel, Chenglin Heng, Mohamed Abid, Huajun Liu, Li Yang, Hongzhou Zhang, Igor Shvets
Recently, significant attention has been paid to the resistance switching (RS) behaviour in Fe3O4 and it was explained through the analogy of the electrical driven metal-insulator transition based on the...
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