Nanoscale, 2015, Advance Article
DOI: 10.1039/C5NR02616D, Paper
DOI: 10.1039/C5NR02616D, Paper
Nuria Garcia-Castello, Sergio Illera, Joan Daniel Prades, Stefano Ossicini, Albert Cirera, Roberto Guerra
For B or P substitutional doping in Si/SiO2 quantum dots we indicate, respectively, interfacial and sub-interfacial sites as the most energetically-favored ones. B-doping enhances hole-current at a low voltage, while P-doping enhances electron-current at low and high voltage.
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For B or P substitutional doping in Si/SiO2 quantum dots we indicate, respectively, interfacial and sub-interfacial sites as the most energetically-favored ones. B-doping enhances hole-current at a low voltage, while P-doping enhances electron-current at low and high voltage.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry
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