Wednesday, July 01, 2015

Few-layered titanium trisulfide (TiS3) field-effect transistors

Nanoscale, 2015, Advance Article
DOI: 10.1039/C5NR01895A, Communication
Open Access Open Access
Creative Commons Licence  This article is licensed under a Creative Commons Attribution 3.0 Unported Licence.
Alexey Lipatov, Peter M. Wilson, Mikhail Shekhirev, Jacob D. Teeter, Ross Netusil, Alexander Sinitskii
Titanium trisulfide (TiS3) whiskers can be mechanically exfoliated and used for fabrication of field-effect transistors, which upon coating with Al2O3 exhibit mobilities up to 43 cm2 V-1 s-1 and ON/OFF ratios up to 7000.
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