Nanoscale, 2015, Advance Article
DOI: 10.1039/C5NR02747K, Paper
DOI: 10.1039/C5NR02747K, Paper
D. S. Oliveira, L. H. G. Tizei, A. Li, T. L. Vasconcelos, C. A. Senna, B. S. Archanjo, D. Ugarte, M. A. Cotta
Micron-long <211>-oriented III-V nanowires are made possible due to lamellar twinning and stacking faults which stabilize the {111}A facet at the catalyst-nanowire interface.
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Micron-long <211>-oriented III-V nanowires are made possible due to lamellar twinning and stacking faults which stabilize the {111}A facet at the catalyst-nanowire interface.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry
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