Nanoscale, 2015, Advance Article
DOI: 10.1039/C5NR02778K, Communication
DOI: 10.1039/C5NR02778K, Communication
Hao-Di Wu, Feng-Xia Wang, Meng Zhang, Ge-Bo Pan
Field-effect transistors (FETs) based on coronene[middle dot]TCNQ exhibit an n-type characteristic and show better FET performances than TCNQ.
To cite this article before page numbers are assigned, use the DOI form of citation above.
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Field-effect transistors (FETs) based on coronene[middle dot]TCNQ exhibit an n-type characteristic and show better FET performances than TCNQ.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry
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