Nanoscale, 2015, Advance Article
DOI: 10.1039/C5NR02750K, Paper
DOI: 10.1039/C5NR02750K, Paper
T. S. Pan, M. Gao, Z. L. Huang, Y. Zhang, Xue Feng, Y. Lin
The dopant desorption caused by the self-heating of a graphene transistor leads to unstable transfer characteristics. By using a high thermal conductivity dielectric layer, this self-heating effect can be suppressed.
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The dopant desorption caused by the self-heating of a graphene transistor leads to unstable transfer characteristics. By using a high thermal conductivity dielectric layer, this self-heating effect can be suppressed.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry
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