Nanoscale, 2015, 7,13489-13494
DOI: 10.1039/C5NR02786A, Paper
DOI: 10.1039/C5NR02786A, Paper
Namsoo Lim, Yusin Pak, Jin Tae Kim, Youngkyu Hwang, Ryeri Lee, Yogeenth Kumaresan, NoSoung Myoung, Heung Cho Ko, Gun Young Jung
A PMMA interlayer dramatically reduces unwanted surface etching at the gap under the AAO membrane mask, resulting in a smooth silicon nanopore array (SiNPs) at sub-100 nm range.
The content of this RSS Feed (c) The Royal Society of Chemistry
A PMMA interlayer dramatically reduces unwanted surface etching at the gap under the AAO membrane mask, resulting in a smooth silicon nanopore array (SiNPs) at sub-100 nm range.
The content of this RSS Feed (c) The Royal Society of Chemistry
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