Wednesday, August 05, 2015

An enhanced surface passivation effect in InGaN/GaN disk-in-nanowire light emitting diodes for mitigating Shockley-Read-Hall recombination

Nanoscale, 2015, Advance Article
DOI: 10.1039/C5NR03448E, Paper
Chao Zhao, Tien Khee Ng, Aditya Prabaswara, Michele Conroy, Shafat Jahangir, Thomas Frost, John O'Connell, Justin D. Holmes, Peter J. Parbrook, Pallab Bhattacharya, Boon S. Ooi
An organic passivation process for nitride nanowires was first proposed to reduce Shockley-Read-Hall non-radiative recombination of nanowire light emitting diodes.
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