Nanoscale, 2015, Advance Article
DOI: 10.1039/C5NR03307A, Paper
DOI: 10.1039/C5NR03307A, Paper
Yuseong Gim, Boseok Kang, BongSoo Kim, Sun-Guk Kim, Joong-Hee Lee, Kilwon Cho, Bon-Cheol Ku, Jeong Ho Cho
Atomically-thin molecular layers of aryl-functionalized graphene oxides (GOs) were used to modify the surface characteristics of source-drain electrodes to improve the performances of organic field-effect transistor (OFET) devices.
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Atomically-thin molecular layers of aryl-functionalized graphene oxides (GOs) were used to modify the surface characteristics of source-drain electrodes to improve the performances of organic field-effect transistor (OFET) devices.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry
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