Nanoscale, 2015, 7,13561-13567
DOI: 10.1039/C5NR02750K, Paper
DOI: 10.1039/C5NR02750K, Paper
T. S. Pan, M. Gao, Z. L. Huang, Y. Zhang, Xue Feng, Y. Lin
The dopant desorption caused by the self-heating of a graphene transistor leads to unstable transfer characteristics. By using a high thermal conductivity dielectric layer, this self-heating effect can be suppressed.
The content of this RSS Feed (c) The Royal Society of Chemistry
The dopant desorption caused by the self-heating of a graphene transistor leads to unstable transfer characteristics. By using a high thermal conductivity dielectric layer, this self-heating effect can be suppressed.
The content of this RSS Feed (c) The Royal Society of Chemistry
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