Ultrafast Electron and Hole Relaxation Pathways in Few-Layer MoS2

The Journal of Physical Chemistry C

DOI: 10.1021/acs.jpcc.5b05048

Zhaogang Nie, Run Long, Jefri S. Teguh, Chung-Che Huang, Daniel W. Hewak, Edwin K. L. Yeow, Zexiang Shen, Oleg V. Prezhdo and Zhi-Heng Loh
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